Alfred University Research and Archive (AURA)

Semiconductivity in Cadmium Telluride

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dc.contributor.author Stull, John Leete
dc.date.accessioned 2014-02-28T20:41:45Z
dc.date.available 2014-02-28T20:41:45Z
dc.date.issued 1958-06
dc.identifier.uri http://hdl.handle.net/10829/5585
dc.description.abstract Conventional Hall coefficient and resistivity measurements were carried out in single crystals of CdTe, both "pure" and with added impurities, and in hot-pressed polycrystalline specimens. In most cases, the sign of the current carriers was consistent with the valence of the added impurity. Discrepancies in certain trivalent impurity crystals are explained on the basis of an excess of Cd vacancies. The mobilities for electrons averaged about 200 cm2/v sec, and those of holes about 40 cm2/v sec, both at room temperature. Anomalous changes in resistivity as a function of applied electric field and heat treatment in crystals containing both donors and acceptors were found and investigated. A rough model is developed which accounts for most of the effects observed. en_US
dc.description.sponsorship Office of Naval Research en_US
dc.language.iso en-US en_US
dc.publisher Alfred University. Faculty of Ceramic Engineering. Kazuo Inamori School of Engineering en_US
dc.subject Semiconductivity en_US
dc.subject Cadmium Telluride en_US
dc.title Semiconductivity in Cadmium Telluride en_US
dc.type Thesis en_US


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