Semiconductivity in Cadmium Telluride

dc.contributor.author	Stull, John Leete
dc.date.accessioned	2014-02-28T20:41:45Z
dc.date.available	2014-02-28T20:41:45Z
dc.date.issued	1958-06
dc.description.abstract	Conventional Hall coefficient and resistivity measurements were carried out in single crystals of CdTe, both "pure" and with added impurities, and in hot-pressed polycrystalline specimens. In most cases, the sign of the current carriers was consistent with the valence of the added impurity. Discrepancies in certain trivalent impurity crystals are explained on the basis of an excess of Cd vacancies. The mobilities for electrons averaged about 200 cm2/v sec, and those of holes about 40 cm2/v sec, both at room temperature. Anomalous changes in resistivity as a function of applied electric field and heat treatment in crystals containing both donors and acceptors were found and investigated. A rough model is developed which accounts for most of the effects observed.	en_US
dc.description.sponsorship	Office of Naval Research	en_US
dc.identifier.uri	http://hdl.handle.net/10829/5585
dc.language.iso	en-US	en_US
dc.publisher	Alfred University. Faculty of Ceramic Engineering. Kazuo Inamori School of Engineering	en_US
dc.subject	Semiconductivity	en_US
dc.subject	Cadmium Telluride	en_US
dc.title	Semiconductivity in Cadmium Telluride	en_US
dc.type	Thesis	en_US

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